Ya-Qing Bie, Zhi-Min Liao, Peng-Wei Wang, Yang-Bo Zhou, Xiao-Bing Han, Yu Ye, Qing Zhao,

Xiao-Song Wu, Lun Dai, Jun Xu, Li-Wen Sang, Jun-Jing Deng, K. Laurent, Y. Leprince-Wang, Da-Peng Yu

ZnO nanowires have attracted a great deal of attention because of their potential applications in electronic and photonic devices. However, the difficulties inherent in the fabrication of high quality p-type ZnO nanowires have hindered their application in LEDs and photovoltaic (PV) devices based on ZnO homojunctions. As an alternative approach, n-ZnO/p-GaN heterojunctions potentially have great applications on the photoelectrical devices. In this work, single n-ZnO nanowire/p-GaN heterojunctions are produced for the first time. This heterojunctions display excellent PV characters: the large Voc ~ 2.7 V, the high Jsc ~ 4250 mA/cm2 and high output ~80 nW electrical power, which establish the current state-of-the-art of single ZnO nanowire PV devices. Physical mechanisms behind the PV effect were systematically investigated by varying temperature and incident power density. Additional, the UV electroluminescence (EL) from the p-n junctions has also been obtained.Advanced Materials, 2010:http://dx.doi.org/10.1002/adma.201000985