Large Magnetoresistance in Few Layer Graphene Stacks with Current Perpendicular to Plane Geometry
Time：2012-05-01ClickTimes：
By Zhi-Min Liao†, Han-Chun Wu†, Shishir Kumar, Georg S. Duesberg, Yang-Bo Zhou, Graham L. W. Cross, Igor V. Shvets,
and Da-Peng Yu
[†]Z.M.L and H.C.W contributed equally to this work.
Advanced Materials, 24, 1862 (2012)
Large magnetoresistance (MR) effect of few layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane was studied. A non-saturation and anisotropic MR with the value over 60% at 14 T was observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications.
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Figure left：Schematic of a graphene stack sandwiched by two electrodes. The graphene grown on Cu foil by CVD method was transferred layer-by-layer to form the graphene stack; right: The MR of a two-layer graphene stack measured at 2 K with different angles between the normal of the graphene plane and the magnetic field.
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